Influence of pn junction surface region upon the peak pulse power of silicon transient voltage suppressors

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 1997, Pages 331-334

  Obreja, V V N ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS;

SILICON TRANSIENT VOLTAGE SUPPRESSORS (TVS);

VOLTAGE REGULATORS;

EID: 0030635398     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)