Modelling the ISFET behaviour under temperature variations using BIOSPICE

Electronics Letters

Volumn 32, Issue 10, 1996, Pages 936-938

  Massobrio, G ^a   Martinoia, S ^a  

^a UNIVERSITY OF GENOA   (Italy)

Author keywords

Field effect transistors; SPICE

Indexed keywords

ALUMINA; CHEMICAL SENSORS; COMPUTER SIMULATION; ELECTRIC INSULATORS; MATHEMATICAL MODELS; PH; PHYSICAL PROPERTIES; SEMICONDUCTING SILICON; SILICON NITRIDE; TEMPERATURE; THERMAL EFFECTS;

FERMI POTENTIAL; GOUY-CHAPMAN-STERN MODEL; SOFTWARE PACKAGE BIOSPICE; SOFTWARE PACKAGE SPICE; TEMPERATURE DEPENDENCE;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0030576257     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960577     Document Type: Article

References (5)

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2. MASSOBRIO, G., MARTINOIA, S., and GRATTAROLA, M.: 'Use of SPICE for modeling silicon-based chemical sensors', Sens. Mater., 1994, 6, (2), pp. 101-123
3. BARABASH, P.R., COBBOLD, R.S.C., and WLODARSKI, W.B.: 'Analysis of the threshold voltage and its temperature dependence in electrolyte-insulator-semiconductor field-eflect trransistor (EISFETs)', IEEE Trans. Electron Devices, 1987, 34, (6), pp. 1271-1282
4. 3/ electrolyte interface', J. Colloid Interface Sci., 1988, 122, (2), pp. 336-345
5. SIBBALD, A.: 'Chemical-sensitive field-effect transistors', IEE Proc. I, 1983, 130, (5), pp. 233-244