Numerical simulation of local charging during plasma etching of a dielectric material

Electronics Letters

Volumn 32, Issue 10, 1996, Pages 890-891

  Shibkov, A ^a   Abatchev, M K ^a   Kang, H K ^a   Lee, M Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Plasma; Ultra large scale integration etching

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC INSULATORS; ELECTRONS; IONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PERMITTIVITY; PLASMA ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES;

ETCHED PROFILE REDUCTION; ION CHARGE; ION ENERGY REDUCTION; POTENTIAL DISTRIBUTION; SURFACE CHARGE DISTRIBUTION; ULTRA LARGE SCALE INTEGRATION ETCHING;

DIELECTRIC MATERIALS;

EID: 0030576214     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960585     Document Type: Article

References (9)

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