Photoconductivity spectra for boron acceptors in Si1-xGex alloys

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 211-213

  Shi, X H ^a   Liu, P L ^a   Chen, Z H ^a   Shen, S C ^a   Schilz, J ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BORON; COMPOSITION; ELECTRON TRANSITIONS; INFRARED SPECTROSCOPY; MAGNETIC FIELD EFFECTS; PHOTOCONDUCTIVITY; PHOTOIONIZATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON ALLOYS;

BORON ACCEPTORS; CZOCHRALSKI TECHNIQUE; FAR INFRARED SPECTROSCOPY; GROUND STATE; VALENCE BAND;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030574540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116463     Document Type: Article

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