12Gbit/s laser diode and optical modulator drivers with InP/InGaAs double HBTs

Electronics Letters

Volumn 32, Issue 23, 1996, Pages 2156-2157

  Bauknecht, R ^a   Schneibel, H P ^a   Schmid, J ^a   Melchior, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Driver circuits; Gallium arsenide; Indium phosphide

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT AMPLIFIERS; LIGHT MODULATORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS;

ELECTRONIC DRIVER CIRCUITS;

OPTICAL COMMUNICATION EQUIPMENT;

EID: 0030574187     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961427     Document Type: Article

References (7)

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2. MONTGOMERY, R.K., REN, F., ABERNATHY, C.R., FULLOWAN, T.R., KOPF, R.F., SMITH, P.R., PEARTON, S.J., WISK, P., LOTHIAN, J., NOTTENBURG, R.N., NGUYEN, T.V., and BOSCH, F.: '10Gbit/s AlGaAs/ GaAs HBT driver IC for lasers or lightwave modulators', Electron. Lett., 1991, 27, (20), pp. 1827-1829
3. BANU, M., JALALI, B., NOTTENBURG, R., HUMPHREY, D.A., MONTGOMERY, R.K., HAMM, R.A., and PANISH, M.B.: '10Gbit/s bipolar laser driver', Electron. Lett., 1991, 27, (3), pp. 278-280
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5. BAUKNECHT, R., DURAN, H., SCHMATZ, M., and MELCHIOR, H.: MnGaAs/InP double heterostructure bipolar transistors for high speed and high voltage driver circuit applications'. Proc. IPRM, 1993, pp. 565-568
6. CHAU, H.F., LIU, W., and BEAM III, E.A.: 'InP-based HBTs and their perspective for microwave applications'. Proc. IPRM, 1995, pp. 640-643
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