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1
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0000156709
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A series of early papers on these materials includes the following: Morris A H, Evans B J, Eaton J A and Leung L K 1969 Can. J. Phys. 47 2691 Leung L K, Morrish A H and Searle C W 1969 Can. J. Phys. 47 2697 Searle C W and Wang S T 1969 Can. J. Phys. 47 2703 Oretzki M J and Gaunt P 1970 Can. J. Phys. 48 346 Searle C W and Wang S T 1970 Can. J. Phys. 48 2023
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0000063991
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A series of early papers on these materials includes the following: Morris A H, Evans B J, Eaton J A and Leung L K 1969 Can. J. Phys. 47 2691 Leung L K, Morrish A H and Searle C W 1969 Can. J. Phys. 47 2697 Searle C W and Wang S T 1969 Can. J. Phys. 47 2703 Oretzki M J and Gaunt P 1970 Can. J. Phys. 48 346 Searle C W and Wang S T 1970 Can. J. Phys. 48 2023
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Leung, L.K.1
Morrish, A.H.2
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0000549805
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A series of early papers on these materials includes the following: Morris A H, Evans B J, Eaton J A and Leung L K 1969 Can. J. Phys. 47 2691 Leung L K, Morrish A H and Searle C W 1969 Can. J. Phys. 47 2697 Searle C W and Wang S T 1969 Can. J. Phys. 47 2703 Oretzki M J and Gaunt P 1970 Can. J. Phys. 48 346 Searle C W and Wang S T 1970 Can. J. Phys. 48 2023
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Searle, C.W.1
Wang, S.T.2
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4
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0001037058
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A series of early papers on these materials includes the following: Morris A H, Evans B J, Eaton J A and Leung L K 1969 Can. J. Phys. 47 2691 Leung L K, Morrish A H and Searle C W 1969 Can. J. Phys. 47 2697 Searle C W and Wang S T 1969 Can. J. Phys. 47 2703 Oretzki M J and Gaunt P 1970 Can. J. Phys. 48 346 Searle C W and Wang S T 1970 Can. J. Phys. 48 2023
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Oretzki, M.J.1
Gaunt, P.2
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5
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0000049330
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A series of early papers on these materials includes the following: Morris A H, Evans B J, Eaton J A and Leung L K 1969 Can. J. Phys. 47 2691 Leung L K, Morrish A H and Searle C W 1969 Can. J. Phys. 47 2697 Searle C W and Wang S T 1969 Can. J. Phys. 47 2703 Oretzki M J and Gaunt P 1970 Can. J. Phys. 48 346 Searle C W and Wang S T 1970 Can. J. Phys. 48 2023
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Searle, C.W.1
Wang, S.T.2
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Lu, L.2
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5844261377
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Jia, Y.X.2
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Cohen, M.L.6
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22
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0000882840
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Crystals were from the same synthesis batch as those used by Jia Y X, Lu L, Khazeni K, Crespi V H, Cohen M L and Zettl A 1995 Phys. Rev. B 52 9147
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Zettl, A.6
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24
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0342832212
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A/B site vacancies can be associated with self-doping; Manoharan S S, Kumar D, Hegde M S, Satyalakshmi K M, Prasad V and Subramanyam S V 1995 J. Solid State Chem. 117 420
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Kumar, D.2
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Prasad, V.5
Subramanyam, S.V.6
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28
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5344223360
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We neglect in this context the effects of changes in pressure upon the magnitude of the local moment and the exchange coupling
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We neglect in this context the effects of changes in pressure upon the magnitude of the local moment and the exchange coupling.
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29
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0000906605
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Crespi V H, Lu L, Jia Y X, Khazeni K, Zettl A and Cohen M L 1996 Phys. Rev. B 53 14303
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Crespi, V.H.1
Lu, L.2
Jia, Y.X.3
Khazeni, K.4
Zettl, A.5
Cohen, M.L.6
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31
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5344252985
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A fit of essentially equal quality obtains from even the constant-pressure data
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A fit of essentially equal quality obtains from even the constant-pressure data.
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32
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5344265061
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We are wary of drawing strong conclusions regarding the pressure sensitivity of the pre-factor since its evaluation requires a lengthy extrapolation to infinite temperature. A qualitative reduction in ρ0 under pressure is clear
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We are wary of drawing strong conclusions regarding the pressure sensitivity of the pre-factor since its evaluation requires a lengthy extrapolation to infinite temperature. A qualitative reduction in ρ0 under pressure is clear.
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33
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5344228236
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Additional uncertainty enters this estimate because the flattening of the temperature dependence of the lattice constant at low temperatures has not yet been measured
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Additional uncertainty enters this estimate because the flattening of the temperature dependence of the lattice constant at low temperatures has not yet been measured.
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34
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5344275188
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This discussion is insensitive to the exact form taken for the conduction processes in the high- and low-temperature phases, so long as the general metallic and semiconductive behaviours are maintained
-
This discussion is insensitive to the exact form taken for the conduction processes in the high- and low-temperature phases, so long as the general metallic and semiconductive behaviours are maintained.
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38
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36449005075
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Xiong G C, Li Q, Ju H L, Mao S N, Senapati L, Xi X X, Greene R L and Venlatesan T 1995 Appl. Phys. Lett. 66 1427, figure 1 Millis A J, Littlewood P B and Shraiman B I 1995 Phys. Rev. Lett. 74 5144, inset of figure 1 (data from Y Tokura, A Urushibara, Y Morimoto, T Arima, A Asamitsu, G Kido, and N Furukawa) Hwang H Y, Cheong S-W, Radaelli P G, Marezio N and Batlogg B 1995 Phys. Rev. Lett. 75 914, y = 0.35 sample under field in figure 1 Jia Y X, Crespi V H, Lu L, Khazeni K and Zettl A 1995 unpublished Hundley M F 1995 personal communication.
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(1995)
Appl. Phys. Lett.
, vol.66
, pp. 1427
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Xiong, G.C.1
Li, Q.2
Ju, H.L.3
Mao, S.N.4
Senapati, L.5
Xi, X.X.6
Greene, R.L.7
Venlatesan, T.8
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39
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0343224416
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Xiong G C, Li Q, Ju H L, Mao S N, Senapati L, Xi X X, Greene R L and Venlatesan T 1995 Appl. Phys. Lett. 66 1427, figure 1 Millis A J, Littlewood P B and Shraiman B I 1995 Phys. Rev. Lett. 74 5144, inset of figure 1 (data from Y Tokura, A Urushibara, Y Morimoto, T Arima, A Asamitsu, G Kido, and N Furukawa) Hwang H Y, Cheong S-W, Radaelli P G, Marezio N and Batlogg B 1995 Phys. Rev. Lett. 75 914, y = 0.35 sample under field in figure 1 Jia Y X, Crespi V H, Lu L, Khazeni K and Zettl A 1995 unpublished Hundley M F 1995 personal communication.
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Phys. Rev. Lett.
, vol.74
, pp. 5144
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Millis, A.J.1
Littlewood, P.B.2
Shraiman, B.I.3
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40
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78751586925
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Xiong G C, Li Q, Ju H L, Mao S N, Senapati L, Xi X X, Greene R L and Venlatesan T 1995 Appl. Phys. Lett. 66 1427, figure 1 Millis A J, Littlewood P B and Shraiman B I 1995 Phys. Rev. Lett. 74 5144, inset of figure 1 (data from Y Tokura, A Urushibara, Y Morimoto, T Arima, A Asamitsu, G Kido, and N Furukawa) Hwang H Y, Cheong S-W, Radaelli P G, Marezio N and Batlogg B 1995 Phys. Rev. Lett. 75 914, y = 0.35 sample under field in figure 1 Jia Y X, Crespi V H, Lu L, Khazeni K and Zettl A 1995 unpublished Hundley M F 1995 personal communication.
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(1995)
Phys. Rev. Lett.
, vol.75
, pp. 914
-
-
Tokura, Y.1
Urushibara, A.2
Morimoto, Y.3
Arima, T.4
Asamitsu, A.5
Kido, G.6
Furukawa, N.7
Hwang, H.Y.8
Cheong, S.-W.9
Radaelli, P.G.10
Marezio, N.11
Batlogg, B.12
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41
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5344230004
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unpublished
-
Xiong G C, Li Q, Ju H L, Mao S N, Senapati L, Xi X X, Greene R L and Venlatesan T 1995 Appl. Phys. Lett. 66 1427, figure 1 Millis A J, Littlewood P B and Shraiman B I 1995 Phys. Rev. Lett. 74 5144, inset of figure 1 (data from Y Tokura, A Urushibara, Y Morimoto, T Arima, A Asamitsu, G Kido, and N Furukawa) Hwang H Y, Cheong S-W, Radaelli P G, Marezio N and Batlogg B 1995 Phys. Rev. Lett. 75 914, y = 0.35 sample under field in figure 1 Jia Y X, Crespi V H, Lu L, Khazeni K and Zettl A 1995 unpublished Hundley M F 1995 personal communication.
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(1995)
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Jia, Y.X.1
Crespi, V.H.2
Lu, L.3
Khazeni, K.4
Zettl, A.5
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42
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5344226936
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personal communication
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Xiong G C, Li Q, Ju H L, Mao S N, Senapati L, Xi X X, Greene R L and Venlatesan T 1995 Appl. Phys. Lett. 66 1427, figure 1 Millis A J, Littlewood P B and Shraiman B I 1995 Phys. Rev. Lett. 74 5144, inset of figure 1 (data from Y Tokura, A Urushibara, Y Morimoto, T Arima, A Asamitsu, G Kido, and N Furukawa) Hwang H Y, Cheong S-W, Radaelli P G, Marezio N and Batlogg B 1995 Phys. Rev. Lett. 75 914, y = 0.35 sample under field in figure 1 Jia Y X, Crespi V H, Lu L, Khazeni K and Zettl A 1995 unpublished Hundley M F 1995 personal communication.
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(1995)
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Hundley, M.F.1
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43
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5344242456
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We borrow the term 'bad metal' from S A Kivelson. It refers to a system which violates the Ioffe-Regel limit and yet shows a metallic temperature dependence of the resistivity. Covert hopping refers to a situation in which the temperature exceeds the activation energy
-
We borrow the term 'bad metal' from S A Kivelson. It refers to a system which violates the Ioffe-Regel limit and yet shows a metallic temperature dependence of the resistivity. Covert hopping refers to a situation in which the temperature exceeds the activation energy.
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