Influence of antimony doping on electrical properties of barium titanate (BaTiO3) thin films

Materials Letters

Volumn 26, Issue 6, 1996, Pages 265-271

  Sasaki, Y ^a   Fujii, I ^a   Matsui, T ^a   Morii, K ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Antimony doped; BaTiO3; Ion beam sputtering; Polycrystalline films; Semiconduction

Indexed keywords

ACTIVATION ENERGY; ANTIMONY; BARIUM TITANATE; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; GRAIN SIZE AND SHAPE; ION BEAMS; POLYCRYSTALLINE MATERIALS; SPUTTERING; THIN FILMS;

ANTIMONY DOPING; DOPING CONCENTRATION; HEYWANG MODEL; ION BEAM SPUTTERING; SEMICONDUCTION;

DIELECTRIC FILMS;

EID: 0030571902     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-577X(95)00231-6     Document Type: Article

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