Atomic absorption monitor for deposition process control of aluminum at 394 nm using frequency-doubled diode laser

Applied Physics Letters

Volumn 68, Issue 6, 1996, Pages 729-731

  Wang, Weizhi ^a   Fejer, M M ^a   Hammond, R H ^a   Beasley, M R ^a   Ahn, C H ^a   Bortz, M L ^b   Day, T ^b  

^a STANFORD UNIVERSITY   (United States)

^b Focused Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC SPECTROSCOPY; COHERENT LIGHT; ELECTRON BEAMS; EVAPORATION; LITHIUM COMPOUNDS; MAGNETRON SPUTTERING; METALLIC FILMS; PROCESS CONTROL; THICKNESS MEASUREMENT; ULTRAVIOLET RADIATION; WAVEGUIDES;

ATOMIC ABSORPTION MONITOR; ATOMIC VAPOR DENSITY; CLOSED LOOP OPERATION; FILM THICKNESS; FREQUENCY DOUBLED DIODE LASER; HYPERFINE SPLITTING; LITHIUM NIOBATE;

SEMICONDUCTOR LASERS;

EID: 0030569879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116785     Document Type: Article

References (7)

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