Electronic structure of (001) (AlAs)k(GaAs)l(AlAs)m(GaAs)n superlattices

Journal of Physics Condensed Matter

Volumn 8, Issue 45, 1996, Pages 8859-8867

  Fernandez Alvarez L ^a   Monsivais, G ^b   Velasco, V R ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ENERGY GAP; GREEN'S FUNCTION; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BAND EDGE LEVELS; DIRECT GAP; EMPIRICAL TIGHT BINDING MODEL; ENERGY EIGENVALUES; INDIRECT GAP;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030569180     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/8/45/019     Document Type: Article

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