Highly uniform monolithic 1 × 12 array of InGaAs photodiodes

Electronics Letters

Volumn 32, Issue 1, 1996, Pages 61-62

  Ho, Wen Jeng ^a   Wu, Meng Chyi ^a   Dai, Ting Arn ^b   Lin, Wei ^b   Tu, Yuan Kuang ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b Ministry of Transportation and Communications Taiwan   (Taiwan)

Author keywords

Optoelectronic devices; Photodiodes

Indexed keywords

CAPACITANCE; CROSSTALK; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; INTEGRATED OPTOELECTRONICS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

DARK CURRENTS; MONOLITHIC INTEGRATION; PACKAGED ARRAY; PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; WIRE BONDING;

PHOTODIODES;

EID: 0030568201     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960007     Document Type: Article

References (4)

1. KOREN, U., MARGALIT, S., CHEN, T.R., YU, K.L., YARIV, A., BARCHAIM, N., LAU, K.Y., and URY, I.: 'Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices', IEEE J. Quantum Electron., 1982, QE-18, pp. 1653-1662
2. BROWN, M.G., HU, P.H.S., KAPLAN, D.R., OTA, Y., SEABURY, C.W., WASHINGTON, M.A., BECKER, E.E., JOHNSON, J.G., KOZA, M., and POTOPOWICZ, J.R.: 'Monolithically integrated 1 × 12 array of planar InGaAs/InP photodiodes', J. Lightwave Technol., 1986, LT-4, pp. 283-287
3. TAKAHASHI, K., MUROTANI, T., ISHII, M., SUSAKI, W., and TAKAMIYA, S.: 'A monolithic 1 × 10 array of InGaAsP/InP photodiodes with small dark current and uniform responsivities', IEEE J. Quantum Electron., 1981, QE-17, pp. 239-242
4. KAPLAN, D.R., and FORREST, S.R.: 'Electrical crosstalk in p-i-n arrays, part I: theory', J. Lightwave Technol., 1986, LT-4, pp. 1460-1469