Floating-zone growth and characterization of Fe2SiO4 single crystals

Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 759-763

  Tsai, Tse Lun ^a   Markgraf, Steven A ^a   Dieckmann, Rüdiger ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; CRYSTAL GROWTH; DENSITY MEASUREMENT (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; EMISSION SPECTROSCOPY; ETCHING; MORPHOLOGY; PLASMA APPLICATIONS; SINGLE CRYSTALS;

FAYALITE; FLOATING ZONE METHOD; INDUCTIVELY COUPLED PLASMA ATOMIC EMISSION SPECTROSCOPY (ICPAES);

IRON COMPOUNDS;

EID: 0030566584     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00459-9     Document Type: Article

References (10)

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3. H. Takei, J. Crystal Growth 43 (1978) 463.
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6. T.-L. Tsai and R. Dieckmann, Phys. Chem. Mineral., submitted.
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10. T.-L. Tsai and R. Dieckmann, in preparation.