A comparative EPR study of ion implantation induced damage in Si, Sil-xGex (x ≠ 0) and SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 139-146

  Barklie, R C ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; GERMANIUM COMPOUNDS; ION BOMBARDMENT; SILICON CARBIDE; SILICON COMPOUNDS;

GERMANIUM SILICIDE;

ION IMPLANTATION;

EID: 0030566573     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00496-X     Document Type: Article

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