Wide bandwidth (100) GaAs/fluorides quarter-wavelength Bragg reflectors grown by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 23, 1996, Pages 3474-3476

  Shi, Z ^a   Zogg, H ^a   Muller P ^a   Jung, I D ^a   Keller, U ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM FLUORIDE; CALCIUM FLUORIDE; DISTRIBUTED BRAGG REFLECTORS; FABRY-PEROT SATURABLE ABSORBERS; REFLECTANCE;

BANDWIDTH; FLUORINE COMPOUNDS; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACES;

MIRRORS;

EID: 0030566562     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117256     Document Type: Article

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