Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodes

Applied Physics Letters

Volumn 69, Issue 23, 1996, Pages 3569-3571

  Stone, R J ^a   Michels, J G ^a   Wong, S L ^a   Foxon, C T ^a,b   Nicholas, R J ^a   Fox, A M ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ABSORPTION; ELECTRON RESONANCE; ELECTRON TUNNELING; ELECTRONS; HOT CARRIERS; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

HOT ELECTRON; INTRASUBBAND ABSORPTION; PHOTOCURRENT; TERAHERTZ RADIATION;

RADIATION EFFECTS;

EID: 0030566561     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117248     Document Type: Article

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11. Note that in our sample, optical phonon assisted processes can be neglected as the difference in energy between the initial and final states participating in the tunneling is much less than the optical phonon energy.
12. Increasing the carrier density at constant FIR power does not affect the power absorbed per carrier because free carrier absorption is proportional to the number of carriers.