Morphology of the implantation induced disorder in GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 236-239

  Desnica, U V ^a   Desnica, I D ^a   Ivanda, M ^a   Haynes, T E ^b  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL DEFECTS; ION IMPLANTATION; MORPHOLOGY; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

CRYSTAL DISORDER;

ION BOMBARDMENT;

EID: 0030566513     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00516-2     Document Type: Article

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