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Applied Physics Letters

Volumn 69, Issue 23, 1996, Pages 3453-3455

Experimental characterization of reactive ion etched germanium diffraction gratings at 10.6 μm

(9) Stiens, J a Ranson, W a Cottam, R a De Tandt, C a Vounckx, R a Kotov, V b Shkerdin, G b Dhoedt, B c Baets, R c

a VRIJE UNIVERSITEIT BRUSSEL (Belgium)

b INST OF RADIO ENG AND ELECTRONICS (Russian Federation)

c GHENT UNIVERSITY (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARBON DIOXIDE LASERS; MORPHOLOGY; PHOTORESISTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SULFUR COMPOUNDS;

ETCH PROFILE; ETCH SELECTIVITY; ETCHANTS; SULFUR HEXAFLUORIDE;

DIFFRACTION GRATINGS;

EID: 0030566437 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.117249 Document Type: Article

Times cited : (2)

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