Reaction mechanisms of mono-molecular layer growth using chemical adsorption

Applied Surface Science

Volumn 106, Issue , 1996, Pages 11-21

  Nishizawa, Jun Ichi ^a,b   Kurabayashi, Toru ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; FILM GROWTH; MASS SPECTROMETRY; MONOLAYERS; OPTICAL VARIABLES MEASUREMENT; REACTION KINETICS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SURFACE STRUCTURE;

SURFACE REACTION; SURFACE REFLECTIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030565756     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00428-X     Document Type: Article

References (24)

1. J. Nishizawa, J. Jpn. Inst. Met. 25 (1961) 149, 177; M. Kumagawa, H. Sunami, T. Terasaki and J. Nishizawa, Jpn. J. Appl. Phys. 7 (1968) 1332; J. Electrochem. Soc. 117 (1970) 907.
2. J. Nishizawa, J. Jpn. Inst. Met. 25 (1961) 149, 177; M. Kumagawa, H. Sunami, T. Terasaki and J. Nishizawa, Jpn. J. Appl. Phys. 7 (1968) 1332; J. Electrochem. Soc. 117 (1970) 907.
3. J. Nishizawa, J. Jpn. Inst. Met. 25 (1961) 149, 177; M. Kumagawa, H. Sunami, T. Terasaki and J. Nishizawa, Jpn. J. Appl. Phys. 7 (1968) 1332; J. Electrochem. Soc. 117 (1970) 907.
4. T. Suntola, U.S. Pat. No. 4058430 (1977).
5. M. Ahonen, M. Pessa and T. Suntola, Thin Solid Films 65 (1980) 301.
6. J. Nishizawa and Y. Kokubun, Extended Abstr. 16th Int. Conf. on Solid State Devices and Materials, 1984, p. 1.
7. J. Nishizawa, H. Abe and T. Kurabayashi, J. Electrochem. Soc. 132 (1985) 1197.
8. J. Nishizawa and H. Abe, American Vacuum Society, 32nd Natl. Symp., Final Program 109, Houston, TX, Nov. 1985; J. Nishizawa, H. Abe, T. Kurabayashi and N. Sakurai, J. Vac. Sci. Technol. A 4 (1986) 706.
9. J. Nishizawa and H. Abe, American Vacuum Society, 32nd Natl. Symp., Final Program 109, Houston, TX, Nov. 1985; J. Nishizawa, H. Abe, T. Kurabayashi and N. Sakurai, J. Vac. Sci. Technol. A 4 (1986) 706.
10. J. Nishizawa, K. Aoki, S. Suzuki and K. Kikuchi, J. Electrochem. Soc. 137 (1990) 1898.
11. J. Nishizawa, K. Aoki, S. Suzuki and K. Kikuchi, J. Cryst. Growth 99 (1990) 502.
12. J. Nishizawa and T. Kurabayashi, Densi Tokyo, IEEE Jpn. 26 (1987) 120.
13. J. Nishizawa, H. Abe and T. Kurabayashi, J. Electrochem. Soc. 136 (1989) 478.
14. J. Nishizawa, Proc. 11th Conf. on Solid State Devices, 1979 (unpublished); Jpn. J. Appl. Phys. Suppl. 19 (1980) 3.
15. J. Nishizawa, Proc. 11th Conf. on Solid State Devices, 1979 (unpublished); Jpn. J. Appl. Phys. Suppl. 19 (1980) 3.
16. J. Nishizawa, T. Kurabayashi, H. Abe and A. Nozoe, Surf. Sci. 185 (1987) 249.
17. M.L. Yu, U. Memmert and T.F. Kuech, Appl. Phys. Lett. 55 (1989) 1011.
18. U. Memmert and M.L. Yu, Appl. Phys. Lett. 58 (1990) 1883.
19. J.R. Creighton, Surf. Sci. 234 (1990) 287.
20. K. Kodama, M. Ozeki, K. Mochizuki and N. Ohotsuka, Appl. Phys. Lett. 54 (1989) 666.
21. P.A. Taylor, R.M. Wallace, W.J. Choyke, M.J. Dresser and J.T. Yates, Jr., Surf. Sci. 215 (1989) 1286.
22. V.S. Smentkowski and J.T. Yates, Jr., J. Vac. Sci. Technol. A 7 (1989) 3325.
23. D.J. Chadi, J. Vac. Sci. Technol. A 5 (1987) 834.
24. J. Nishizawa, Appl. Surf. Sci. 79/80 (1994) 1.