Thickness effects of SiOxNy, interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 157-164

  Song, M H ^a   Lee, Y H ^a   Hahn, T S ^a   Oh, M H ^a   Yoon, K H ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; ELECTROOPTICAL DEVICES; FILM GROWTH; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS;

CRYSTALLINITY; PHOSPHOR LAYER; POOLE FRENKEL CONDUCTIVITY; SATURATION BRIGHTNESS; THICKNESS EFFECTS; TURN ON VOLTAGE;

THIN FILM DEVICES;

EID: 0030565268     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00234-5     Document Type: Article

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