Influence of the thermal history of melts on the formation of grown-in defects in silicon

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 361-364

  Ikari, Atsushi ^a,b   Izunome, Koji ^a   Kawanishi, Soroku ^a   Togawa, Shinji ^a   Terashima, Kazutaka ^a   Kimura, Shigeyuki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; GRAIN BOUNDARIES; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

GROWN IN DEFECTS; MELT PROPERTIES;

CRYSTAL GROWTH FROM MELT;

EID: 0030565247     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00291-6     Document Type: Article

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