Initial growth of CaF2 and BaF2/CaF2 on Si(110) during molecular beam epitaxy

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 111-121

  Liu, W K ^a   Fang, X M ^a   Yuan, Wei Li ^b   Santos, M B ^a   Chatterjee, T ^a   McCann, P J ^a   O'Rear, E A ^b  

^a UNIVERSITY OF OKLAHOMA   (United States)

^b University of Oklahoma   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; FLUORINE COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ENERGY SHIFT; CORE LEVEL ENERGY SHIFT; FLUORIDE INSULATORS; FLUORIDE INTERMIXING; GROOVED SURFACE MORPHOLOGY; RIDGED SURFACE MORPHOLOGY; TWINNED CRYSTALLOGRAPHIC DOMAINS;

SEMICONDUCTOR GROWTH;

EID: 0030565223     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00233-3     Document Type: Article

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