Zn solubility limit in GaAs: Growth versus equilibrium

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 17-23

  Chen, C Y ^a   Cohen, R M ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENTHALPY; FERMI LEVEL; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SOLUBILITY; THERMAL EFFECTS;

EQUILIBRIUM ZINC SOLUBILITY LIMIT; FERMI ENERGY PINNING; ZINC CONCENTRATION;

SEMICONDUCTOR GROWTH;

EID: 0030565217     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00203-5     Document Type: Article

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