Properties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 133-142

  O'Brien, P ^a   Walsh, J R ^a   Watson, I M ^a   Hart, L ^a   Silva, S R P ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

GLASS SUBSTRATES; OPTICAL SPECTROPHOTOMETRY; PHOTOINDUCED CONDUCTIVITY ENHANCEMENTS; TRAP DOMINATED BEHAVIOR;

SEMICONDUCTING FILMS;

EID: 0030565187     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00225-4     Document Type: Article

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