287 trapping of implanted hydrogen in type Ia diamond

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 688-692

  Smallman, C G ^a   Connell, S H ^a   Madiba, C C P ^a   Sellschop, J P F ^a  

^a UNIVERSITY OF THE WITWATERSRAND   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DIAMOND FILMS; ELECTRIC PROPERTIES; ION BEAMS; ION IMPLANTATION; SYNTHESIS (CHEMICAL); TARGETS; THERMODYNAMIC STABILITY; VAN DE GRAAFF ACCELERATORS;

DEEP TRAPPING; DEPTH DISTRIBUTION; HYDROGEN TRAPPING; NUCLEAR RESONANT REACTION ANALYSIS; RADIATION STABILITY;

HYDROGEN;

EID: 0030565122     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01115-3     Document Type: Article

References (7)

1. J.P.F. Sellschop, in: The Properties of Natural and Synthetic Diamond, ed. J.E. Field (Academic Press, New York, 1992) pp. 81-179.
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3. P.K. Khabibullaev and B.G. Skorodumov, Determination of Hydrogen in Materials (Springer, 1989).
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5. J.F. Ziegler, J.P. Biersack and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, 1985).
6. S.O.F. Dababneh, K. Toukan and I. Khubeis, Nucl. Instr. and Meth. B 83 (1993) 319.
7. D. Dieumegard, B. Maurel and G. Amsel, Nucl. Instr. and Meth. 168 (1980) 93.