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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 645-649

An attempt to make a buried layer of indium in aluminium by ion implantation

(5) Kruse, N a,b Dybkjaer G a,b Johansen, A a Bourdelle, K K c Johnson, E a

a UNIVERSITY OF COPENHAGEN (Denmark)

b ROSKILDE UNIVERSITY (Denmark)

c RUTGERS UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPOSITION; COMPUTER SIMULATION; INCLUSIONS; ION IMPLANTATION; POLISHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM; SINGLE CRYSTALS; SOLUBILITY; SPUTTERING; THERMAL EFFECTS;

BURIED LAYER; CHANNELING ANALYSIS; INDIUM INCLUSIONS; SPUTTERING COEFFICIENT; WEIGHT LOSS MEASUREMENTS;

SEMICONDUCTING FILMS;

EID: 0030565085 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(95)01082-3 Document Type: Article

Times cited : (1)

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