Depth profiles in SiON and AlON thin films produced by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 714-717

  Jacobs, M ^a   Bodart, F ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; MAGNETRON SPUTTERING; NITROGEN; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILES; OXINITRIDE; RESONANT NUCLEAR REACTIONS; SIALON FILMS;

ION IMPLANTATION;

EID: 0030565059     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01108-0     Document Type: Article

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