Luminescence in porous silicon: The role of confinement and passivation

Applied Surface Science

Volumn 102, Issue , 1996, Pages 395-398

  Ossicini, Stefano ^a   Dorigoni, L ^b   Bisi, O ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; APPROXIMATION THEORY; CHEMICAL BONDS; DIELECTRIC PROPERTIES OF SOLIDS; ENERGY GAP; LUMINESCENCE OF INORGANIC SOLIDS; SEMICONDUCTOR QUANTUM WIRES;

ATMOSPHERIC SPHERE APPROXIMATION; CONDUCTION BAND; DANGLING BONDS; LINEAR MUFFIN TIN ORBITALS METHOD; LOW ENERGY SIDE STRUCTURE; LUMINESCENCE TRANSITION; NEAR BAND GAP STATES; QUANTUM CONFINEMENT; VALENCE BAND;

POROUS SILICON;

EID: 0030564930     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00085-2     Document Type: Article

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