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Applied Surface Science

Volumn 102, Issue , 1996, Pages 314-318

Si1-xGex/Si(001) layers under external uniaxial stress: Photoluminescence studies

(6) Mantz, U a Steck, B a Thonke, K a Sauer, R a Schaffler F b Herzog, H J b

a UNIVERSITY OF ULM (Germany)

b DAIMLER AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; COMPRESSION TESTING; CRYSTAL SYMMETRY; DEFORMATION; EXCITONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TENSILE TESTING;

BAND BENDING EFFECTS; BAND OFFSETS; BARRIER MATERIAL; BARRIER MATERIAL SPLITTING; CONDUCTION BAND STATES; DEFORMATION POTENTIAL THEORY; LAYER MATERIAL; QUANTIZATION ENERGIES; STRESS DEPENDENT EXCITON BINDING ENERGIES; VALENCE BAND STATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030564926 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00071-2 Document Type: Article

Times cited : (3)

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