STM studies of Ge-Si thin layers epitaxially grown on Si(111)

Applied Surface Science

Volumn 102, Issue , 1996, Pages 57-61

  Motta, N ^a   Sgarlata, A ^a   De Crescenzi, M ^b   Derrien, J ^c  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b Dipto Matemat Fis Univ Studi C   (Italy)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON GUNS; EPITAXIAL GROWTH; EVAPORATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON ALLOYS; STRAIN RATE; THIN FILMS;

COMPRESSIVE STRAIN; ELECTRON GUN HIGH RATE EVAPORATOR; GERMANIUM MICROCRYSTALS; KNUDSEN CELL EVAPORATOR; LATTICE MISMATCH; SOLID PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030564875     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00019-0     Document Type: Article

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