SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 102, Issue , 1996, Pages 163-168

Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate

(5) Frangis, N a,c Van Tendeloo, G a Van Landuyt, J a Muret, P b Nguyen, T T A b

a UNIVERSITY OF ANTWERP (Belgium)

b LABORATOIRE DE CRISTALLOGRAPHIE (France)

c ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; ERBIUM COMPOUNDS; EVAPORATION; FILM GROWTH; PHASE COMPOSITION; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLOGRAPHIC SHEAR STRUCTURES; DEFECT MODULATED STRUCTURES; DEPOSITION RATIOS; STRUCTURAL VARIANTS;

SEMICONDUCTING FILMS;

EID: 0030564867 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00040-2 Document Type: Article

Times cited : (10)

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