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Applied Surface Science

Volumn 102, Issue , 1996, Pages 159-162

The effect of silicon substrate orientation on the formation of Gd-silicide phases

(5) Molnar Gy a Peto, G a Zsoldos, E a Horvath Z E a Khanh N Q a

a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; ANNEALING; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; GADOLINIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS PHASE FORMATION; GADOLINIUM SILICIDES; MOBILITY DIFFERENCE; SOLID PHASE REACTION PROCESSES; SUBSTRATE ORIENTATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030564862 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00039-6 Document Type: Article

Times cited : (8)

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