Strain relaxation through islands formation in epitaxial SiGe thin films

Applied Surface Science

Volumn 102, Issue , 1996, Pages 73-77

  Barucca, G ^a   Lucchetti, L ^a   Majni, G ^a   Mengucci, P ^a   Murri, R ^b   Pinto, N ^b  

^a UNIVERSITÀ POLITECNICA DELLE MARCHE   (Italy)

^b UNIVERSITY OF CAMERINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN RATE; STRESS RELAXATION; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ISLAND FORMATION; STRAIN RELAXATION;

SEMICONDUCTING FILMS;

EID: 0030564857     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00023-2     Document Type: Article

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