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Applied Surface Science

Volumn 102, Issue , 1996, Pages 230-236

Transport in silicon/germanium nanostructures

(3) Holzmann, M a Tobben D a,b Abstreiter, G a

a WALTER SCHOTTKY INSTITUT (Germany)

b Otto Hahn Ring 6 (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SUPERLATTICES;

HOLE GASES; QUANTUM POINT CONTACT (QPC); TWO DIMENSIONAL ELECTRONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030564854 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00054-2 Document Type: Article

Times cited : (2)

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