Interpretation of the dielectric function of porous silicon layers

Applied Surface Science

Volumn 102, Issue , 1996, Pages 413-416

  Rossow, U ^a,b   Frotscher, U ^b   Pietryga, C ^b   Richter, W ^b   Aspnes, D E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELLIPSOMETRY; ENERGY GAP; NANOSTRUCTURED MATERIALS; PERCOLATION (SOLID STATE); PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTOR DOPING; SURFACE STRUCTURE;

FINITE SIZE EFFECTS; INFINITE CRYSTALS; INTERBAND CRITICAL POINTS; MOMENTUM CONSERVATION; THRESHOLD ENERGY SHIFT;

POROUS SILICON;

EID: 0030564852     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00089-X     Document Type: Article

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