Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

Applied Surface Science

Volumn 102, Issue , 1996, Pages 327-330

  Jaumann, M ^a   Stimmer, J ^a   Schittenhelm, P ^a   Nutzel J F ^a   Abstreiter, G ^a   Neufeld, E ^a,b   Hollander B ^b   Buchal, Ch ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ERBIUM; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DOPANT CONCENTRATION; LUMINESCENCE PEAK INTENSITY;

LIGHT EMITTING DIODES;

EID: 0030564844     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00095-5     Document Type: Article

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