SCOPUS 정보 검색 플랫폼

Volumn 102, Issue , 1996, Pages 217-220

On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SCATTERING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

ELECTRON CONFINEMENT; PHONON CONFINEMENT; SEXTUPLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030564806 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00052-9 Document Type: Article

Times cited : (2)

References (8)

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2
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4
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- Schorer, R.¹ Abstreiter, G.² De Gironcoli, S.³ Molinari, E.⁴ Kibbel, H.⁵ Presting, H.⁶

5
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6
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7
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- Hull, R.¹ Bean, J.C.²

8
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