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Applied Surface Science

Volumn 102, Issue , 1996, Pages 184-188

Ion beam synthesis of heteroepitaxial erbium suicide layers

(5) Wu, M F a,b Vantomme, A b Pattyn, H b Langouche, G b Bender, H c

a PEKING UNIVERSITY (China)

b KU LEUVEN (Belgium)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ERBIUM COMPOUNDS; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CHANNELING EFFECT; CHANNELING SPECTROMETRY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030564805 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00044-X Document Type: Article

Times cited : (5)

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