Uniaxial stress effects on a Si/Si1-xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy

Applied Surface Science

Volumn 102, Issue , 1996, Pages 242-246

  Gennser, Ulf ^a,b   Zaslavsky, A ^c   Grutzmacher D A ^b   Gassot, P ^a   Portal, J C ^a,d  

^a GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c Brown University   (United States)

^d INSA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON RESONANCE; ELECTRON SPECTROSCOPY; ELECTRON TUNNELING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR LASERS; STRESS CONCENTRATION;

BANDMIXING; DOUBLE BARRIER RESONANT TUNNELLING STRUCTURE; FOUR BAND MODEL; HOLE SUBBAND DISPERSIONS; MAGNETOTUNNELLING SPECTROSCOPY; UNIAXIAL STRESS; VOLTAGE SHIFTS;

HETEROJUNCTIONS;

EID: 0030564802     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00056-6     Document Type: Article

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