Surface barriers formation mechanism of the chemically etched CdTe(111) polar surfaces and gold interfaces

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 596-600

  Takeuchi, Toshio ^a   Kore Eda, Toshinori ^a   Ebina, Atsuko ^b  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ETCHING; GOLD; INTERFACES (MATERIALS); MORPHOLOGY; SEMICONDUCTING CADMIUM COMPOUNDS; SURFACE PHENOMENA; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC CONFIGURATION; CADMIUM TELLURIDE; POLAR SURFACES; SCHOTTKY BARRIER PROPERTIES; SURFACE BARRIERS FORMATION;

SURFACE STRUCTURE;

EID: 0030564595     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00346-7     Document Type: Article

References (15)

1. E.H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, 1978).
2. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
3. I.P. Batra, Metallization and Metal-Semiconductor Interfaces (Plenum, New York, 1988).
4. W. Mönch, Electronic Structure of Metal-Semiconductor Contacts (Kluwer, Dordrecht, 1990).
5. W.E. Spicer, I. Lindau, P.R. Skeath and C.Y. Su, J. Vac. Sci. Technol. 17 (1980) 1019.
6. J. Tersoff, Phys. Rev. Lett. 40 (1984) 260.
7. W. Mönch, J. Vac. Sci. Technol. B 6 (1988) 1270.
8. A. Ebina, K. Asano and T. Takahashi, Phys. Rev. B 22 (1980) 1980.
9. A. Ebina, K. Asano and T. Takahashi, Phys. Rev. B 24 (1981) 574.
10. E.P. Warekois, M.C. Lavine, A.N. Mariano and H.C. Gatos, J. Appl. Phys. 33 (1983) 690.
11. H. Iwanaga, T. Yoshiie, S. Takeuchi and K. Mochizuki, J. Cryst. Growth 61 (1983) 691.
12. Y. Marfaing, J. Lascaray and R. Triboulet, in: Metal-Semiconductor Contacts, Ed. M. Pepper, Conf. Ser. No. 22 (The Institute of Physics, London, 1974) p. 201.
13. A. Must, J.P. Pompon, J.J. Grub, M. Wage-Eli, Stuck and P. Siffert, J. Appl. Phys. 54 (1983) 3260.
14. M.H. Patterson and R.H. Williams, J. Cryst. Growth 59 (1982) 281.
15. T.F. Keuch, J. Apply. Phys. 52 (1981) 4874.