A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 601-606

  Chen, Bor Yir ^a,c   Chen, Jiann Ruey ^a   Jenq, Fenq Lin ^a   Hong, Chum Sam ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; HYDROGENATION; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; THERMAL EFFECTS;

CONDUCTION BAND; FIELD EFFECT MOBILITY; GAP STATE MODEL; POISSON EQUATION; TEMPERATURE DEPENDENCE;

THIN FILM TRANSISTORS;

EID: 0030564565     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00347-9     Document Type: Article

References (8)

1. W.G. Spear and P.G. LeComber, J. Non-Cryst. Solids 8-10 (1972) 727.
2. P.G. LeComber, W.E. Spear and A. Ghaith, Electron. Lett. 15 (1979) 179.
3. D.G. Ast, in: Semiconductors and Semimetals, Vol. 21, Part. D, Ed. J. PanKove (Academic Press, New York, 1984) p. 115.
4. J.G. Shaw and M. Hack, J. Appl. Phys. 64 (1988) 4562.
5. M. Shur, M. Hack and J.G. Shaw, J. Appl. Phys. 66 (1989) 3371.
6. R. Schumacher, P. Thomas, K. Weber, W. Fuhs, F. Djamdji, P.G. LeComber and R.E.I. Schropp, Phil. Mag. B 58 (1988) 389.
7. B.-Y. Chen, J.-R. Chen, F.-L. Jenq and C.-S. Hong, Mater. Chem. Phys., in press.
8. M. Shur and M. Hack, J. Appl. Phys. 55 (1984) 3831.