Low pressure MOCVD of TiN thin films

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 546-550

  Kim, So Won ^a   Jimba, Hitoshi ^a   Sekiguchi, Atsushi ^a   Okada, Osamu ^a   Hosokawa, Naokichi ^a  

^a Canon ANELVA Technix Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ASPECT RATIO; CALCULATIONS; CONTOUR MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CONTACTS; PRESSURE; REGRESSION ANALYSIS; TEMPERATURE; THIN FILMS; TITANIUM NITRIDE;

ASPECT RATIO CONTACTS; CONTOUR MAPS; MULTIPLE REGRESSION ANALYSIS; REACTOR PRESSURE; TETRAKIS; WAFER TEMPERATURE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030564557     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00456-4     Document Type: Article

References (3)

1. G.S. Sandhu and T.T. Doan, Advanced Metallization for ULSI Applications 1991 (Materials Research Society, Pittsburgh, PA, 1992) p. 323.
2. I.J. Raaijmaker and R.C. Ellwanger, Advanced Metallization for ULSI Applications in 1992 (Materials Research Society, Pittsburgh, PA, 1993) p. 325.
3. R.L. Jackson, E.J. Mcinerney, B. Roberts, J. Strupp, A. Velaga, S. Patel and L. Halliday, Advanced Metallization for ULSI Applications in 1994 (Materials Research Society, Austin, TX) p. 20.