In situ transport rate monitor during ZnSe crystal growth by PVT

Journal of Crystal Growth

Volumn 165, Issue 1-2, 1996, Pages 169-171

  Fujiwara, S ^a   Matsumoto, K ^a   Shirakawa, T ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; IN SITU PROCESSING; MASS TRANSFER; MONITORING; SEMICONDUCTING ZINC COMPOUNDS; TEMPERATURE;

GROWTH TUBE; IN SITU TRANSPORT RATE MONITOR; NONSTOICHIOMETRY; PHYSICAL VAPOR TRANSPORT; STEFAN FLOW; ZINC SELENID;

CRYSTAL GROWTH;

EID: 0030564552     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00168-6     Document Type: Article

References (9)

1. H. Cheng and E.E. Anderson, J. Crystal Growth 96 (1989) 756.
2. T. Koyama, T. Yodo and K. Yamashita, J. Crystal Growth 94 (1989) 1.
3. M.M. Faktor, R. Heckingbottom and I. Garrett, J. Chem. Soc. (1970) 2657.
4. T. Kiyosawa, K. Igaki and N. Ohashi, Trans. Jpn. Inst. Met. 13 (1972) 248.
5. H. Hartmann and D. Siche, J. Crystal Growth 138 (1994) 260.
6. Yang Bailiang, M. Isshiki, Zhang Chuanping, Huang Ximin and Yu Xiling, J. Crystal Growth 147 (1995) 399.
7. P. Goldfinger and M. Jeunehomme, Trans. Faraday Soc. 59 (1963) 2851.
8. G.J. Russell and J. Woods, J. Crystal Growth 46 (1979) 323.
9. H. Hartmann, R. Mach and B. Selle, in: Current Topics in Materials Science, Vol. 9, Ed. E. Kaldis (North-Holland, Amsterdam, 1982) 334.