Determination of the interface region in multilayer Si/Mo by Auger depth profile and factor analysis

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 84-88

  Morohashi, T ^a,b   Hoshi, T ^b   Nikaido, H ^c   Kudo, M ^a  

^a SEIKEI UNIVERSITY   (Japan)

^b ULVAC PHI Inc   (Japan)

^c NIKON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; IONS; MOLYBDENUM; MULTILAYERS; SILICON; SPUTTERING; STATISTICAL METHODS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AUGER DEPTH PROFILE; DECONVOLUTION; INTERFACE REGION; ION SPUTTERING; PRINCIPAL COMPONENT ANALYSIS; TARGET FACTOR ANALYSIS;

INTERFACES (MATERIALS);

EID: 0030564540     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00262-0     Document Type: Article

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