XPS depth profiling by changing incident X-ray energy

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 56-59

  Shimada, Hiromichi ^a   Matsubayashi, Nobuyuki ^a   Imamura, Motoyasu ^a   Sato, Toshio ^a   Nishijima, Akio ^a  

^a NATL INST OF MAT AND CHEM RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; ELECTRIC EXCITATION; NONDESTRUCTIVE EXAMINATION; SILICON WAFERS; SURFACES; SYNCHROTRON RADIATION; X RAYS;

DEPTH PROFILING; EXCITATION ENERGY; HIGH FLUX SOFT X RAYS; PHOTOELECTRON ATTENUATION; SOLID SURFACE CHARACTERIZATION; SURFACE SENSITIVITY; X RAY ENERGY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0030564398     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00256-5     Document Type: Article

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