1 keV hydrogen implantation in a-Si and c-Si: Physical vs computational modeling

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 115, Issue 1-4, 1996, Pages 468-472

  Bourque, Gilles ^a   Terreault, Bernard ^a  

^a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS;

BINARY COLLISION APPROXIMATION; CRYSTALLINE SILICON; ELASTIC ENERGY LOSS; INELASTIC ENERGY LOSS;

ION IMPLANTATION;

EID: 0030564346     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01525-6     Document Type: Article

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