Characterization of Nd-doped AlGaAs grown by liquid phase epitaxy

Journal of Crystal Growth

Volumn 163, Issue 4, 1996, Pages 343-347

  Lee, Ching Ting ^a   Yeh, Jih Hsien ^a   Lyu, Yen Tang ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; EMISSION SPECTROSCOPY; LIQUID PHASE EPITAXY; MORPHOLOGY; NEODYMIUM; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

BLUE SHIFT; CAPACITANCE VOLTAGE MEASUREMENT; HALL MEASUREMENT; RESIDUAL IMPURITIES; SLIDING BOAT SYSTEMS;

SEMICONDUCTING FILMS;

EID: 0030564068     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01006-8     Document Type: Article

References (5)

1. H. Ennen, Extended Abstracts 19th Conf. Solid State Devices and Materials, Tokyo (1987) p. 83.
2. M. Taniguchi, H. Nakagome and K. Takahei, Appl. Phys. Lett. 58 (1991) 2930.
3. H. Nakagome and K. Takahei, Jpn. J. Appl. Phys. 28 (1989) L2098.
4. H.D. Müller, H. Ennen, J. Schneider and A. Axmann, J. Appl. Phys. 59 (1986) 2210.
5. J.A. Koningstein and J.E. Geusic, Phys. Rev. 136 (1964) 711.