Low dose Ar+ ion implantation effects on the properties of oriented La0.75Ca0.25MnO3 films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 114, Issue 1-2, 1996, Pages 42-45

  Patil, S I ^b   Shreekala, R ^b   Lanke, U ^b   Bhagwat, A ^a,b   Ogale, S B ^b  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b UNIVERSITY OF PUNE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON SCATTERING; EXPERIMENTS; FILMS; MAGNETORESISTANCE; PULSED LASER APPLICATIONS; SEMICONDUCTOR MATERIALS;

POST ANNEALING TREATMENT; PULSED LASER DEPOSITION;

ION IMPLANTATION;

EID: 0030564047     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01583-3     Document Type: Article

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