Precise measurement of the deep defects and surface states in a-Si:H films by absolute CPM

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 304-308

  Fejfar, A ^a   Poruba, A ^b   Vanecek M ^a   Kocka J ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; CALIBRATION; COMPUTER SIMULATION; DEFECTS; ELECTRON ENERGY LEVELS; PHOTOVOLTAIC EFFECTS; SOLAR CELLS;

CONSTANT PHOTOCURRENT METHOD; HYDROGENATED AMORPHOUS SILICON; INHOMOGENEOUS DEFECT DISTRIBUTION; INTERFERENCE FRINGES; RESIDUAL INTERFERENCES;

AMORPHOUS FILMS;

EID: 0030563594     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00692-3     Document Type: Article

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