Influence of annealing above the deposition temperature on metastability in amorphous silicon

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 478-481

  Vanecek M ^a   Fric, J ^a   Poruba, A ^c   Mahan, A H ^b   Crandall, R S ^b  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; DEPOSITION; HYDROGEN; MICROSTRUCTURE; QUENCHING; THERMAL EFFECTS;

AMORPHOUS HYDROGENATED SILICON; HOT WIRE TECHNIQUE; LIGHT SOAKING; METASTABILITY;

AMORPHOUS SILICON;

EID: 0030563548     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00742-3     Document Type: Article

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