SCOPUS 정보 검색 플랫폼

Volumn 198-200, Issue PART 1, 1996, Pages 46-51

Hydrogen-induced defects in polycrystalline silicon

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRONIC DENSITY OF STATES; GRAIN BOUNDARIES; HYDROGEN; POLYCRYSTALLINE MATERIALS;

DARK CONDUCTIVITY; HYDROGEN INDUCED DEFECTS; LIGHT INDUCED DEFECT CREATION; METASTABLE EFFECTS;

SEMICONDUCTING SILICON;

EID: 0030563542 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(95)00653-2 Document Type: Article

Times cited : (7)

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