Ion beam analysis of plasma immersion implanted silicon for solar cell fabrication

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 259-262

  Khanh N Q ^a   Pinter I ^a   Ducso Cs ^a   Adam M ^a   Szilagyi E ^b   Barsony I ^a   El Sherbiny, M A ^a,c   Gyulai, J ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^c Assiut Branch   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; PHOSPHORUS; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SOLAR CELLS; SPUTTERING; SURFACES;

ELECTRICAL ACTIVATION; PLASMA IMMERSION ION IMPLANTATION; SPREADING RESISTANCE PROFILING; SURFACE CONCENTRATION;

ION BEAM LITHOGRAPHY;

EID: 0030563520     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)80062-0     Document Type: Article

References (7)

1. J.R. Conrad, J. Appl. Phys. 62 (1987) 777.
2. B. Mizuno, I. Nakayama, N. Aoi, M. Kubota and T. Komeda, Appl. Phys. Lett. 53 (1988) 2059.
3. X.Y. Qian, N.W. Cheung, M.A. Lieberman, M.I. Current, P.K. Chu, W.L. Harrington, C.W. Magee and E.M. Botnick, Nucl. Instr. and Meth. B 55 (1991) 821.
4. J. Nijs, M. Ghannam, J. Coppye, G. Palmers, Le Quang Nam, M. Rodot, S. Sivoththaman, D. Sarti and R. Peruzzi, Proc. 11th E.C. Photovoltaic Solar Energy Conf., Montreux, Switzerland (1992) p. 164.
5. E. Kótai, Nucl. Instr. and Meth. B 85 (1994) 588.
6. J.P. Biersack and L.G. Haggmark, Nucl. Instr. and Meth. 174 (1980) 257.
7. Shu Qin and Chung Chan, J. Vac. Sci. Technol. 12 (1994) 962.